KREMNIY ASOSLI QUYOSH ELEMENTLARIDA REKOMBINATSIYA VA GENERATSIYA JARAYONI

Authors

  • Rayimjon Aliev
  • Murodjon Abduvoxidov
  • Navruzbek Mirzaalimov
  • Jasurbek G’ulomov

Keywords:

Model, quyosh elementi, rekombinatsiya, generatsiya, SRH, C#6.0

Abstract

Ushbu maqolada kremniy asosli quyosh elementlaridagi rekombinatsiya-generatsiya jarayonlarining nazariyasi yoritilgan. Bundan tashqari, ushbu nazariya asosida tuzilgan dasturda olingan natijalar keltirilgan.

References

D.J.Roulston, N.D.Arora, and S.G.Chamberlain, “Modeling and Measurement of Minority-Carrier Lifetime versus Doping in Diffused Layers of n+-p Silicon Diodes,” IEEE Transactions on Electron Devices, vol. ED-29, no. 2, pp. 284–291, 1982.

J.G.Fossum, “Computer-Aided Numerical Analysis of Silicon Solar Cells,” Solid-State Electronics, vol. 19, no. 4, pp. 269–277, 1976.

J.G.Fossum et al., “Carrier Recombination and Lifetime in Highly Doped Silicon,” Solid-State Electronics, vol. 26, no. 6, pp. 569–576, 1983.

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Published

2020-10-27

How to Cite

Aliev, R., Abduvoxidov, M., Mirzaalimov, N., & G’ulomov, J. (2020). KREMNIY ASOSLI QUYOSH ELEMENTLARIDA REKOMBINATSIYA VA GENERATSIYA JARAYONI. Science and Education, 1(2), 230-235. Retrieved from https://www.openscience.uz/index.php/sciedu/article/view/395

Issue

Vol. 1 No. 2 (2020): Science and Education

Section

Technical Sciences

License

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.