KREMNIY ASOSLI QUYOSH ELEMENTLARIDA REKOMBINATSIYA VA GENERATSIYA JARAYONI
Keywords:
Model, quyosh elementi, rekombinatsiya, generatsiya, SRH, C#6.0Abstract
Ushbu maqolada kremniy asosli quyosh elementlaridagi rekombinatsiya-generatsiya jarayonlarining nazariyasi yoritilgan. Bundan tashqari, ushbu nazariya asosida tuzilgan dasturda olingan natijalar keltirilgan.
References
D.J.Roulston, N.D.Arora, and S.G.Chamberlain, “Modeling and Measurement of Minority-Carrier Lifetime versus Doping in Diffused Layers of n+-p Silicon Diodes,” IEEE Transactions on Electron Devices, vol. ED-29, no. 2, pp. 284–291, 1982.
J.G.Fossum, “Computer-Aided Numerical Analysis of Silicon Solar Cells,” Solid-State Electronics, vol. 19, no. 4, pp. 269–277, 1976.
J.G.Fossum et al., “Carrier Recombination and Lifetime in Highly Doped Silicon,” Solid-State Electronics, vol. 26, no. 6, pp. 569–576, 1983.
Downloads
Published
2020-10-27
How to Cite
Aliev, R., Abduvoxidov, M., Mirzaalimov, N., & G’ulomov, J. (2020). KREMNIY ASOSLI QUYOSH ELEMENTLARIDA REKOMBINATSIYA VA GENERATSIYA JARAYONI. Science and Education, 1(2), 230-235. Retrieved from https://www.openscience.uz/index.php/sciedu/article/view/395
Issue
Section
Technical Sciences